COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Oct 27, 2016
app pub date -
Mar 30, 2016
filing date -
Apr 21, 2015
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Abstract
A compound semiconductor device includes: a substrate; a nucleation layer over the substrate; a first buffer layer over the nucleation layer; a second buffer layer between the nucleation layer and the first buffer layer, the second buffer layer containing an acceptor impurity element or a donor impurity element at a higher concentration than the first buffer layer; a carrier transit layer in contact with the first buffer layer; a carrier supply layer over the carrier transit layer; and a gate electrode, a source electrode, and a drain electrode above the carrier supply layer.
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