Semiconductor device, power supply apparatus and high-frequency amplifier

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United States of America Patent

PATENT NO 9941401
SERIAL NO

15299455

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Abstract

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A semiconductor device includes a semiconductor stacked structure in which a semiconductor layer including an electron supply layer and an electron transit layer is stacked, and a gate electrode contacting with the semiconductor layer included in the semiconductor stacked structure or an insulating layer. The portion of the gate electrode contacting with the semiconductor layer or the insulating layer is an oxide of a metal configuring the portion of the gate electrode contacting with the semiconductor layer or the insulating layer.

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Patent Owner(s)

  • FUJITSU LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Makiyama, Kozo Kawasaki, JP 89 465
Okamoto, Naoya Isehara, JP 116 969
Ozaki, Shirou Yamato, JP 79 931

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