Laser diodes with layer of graphene

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United States of America Patent

PATENT NO 10305251
APP PUB NO 20170331249A1
SERIAL NO

15151647

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Abstract

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According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Yingtao Palo Alto, US 4 9
Liang, Di Palo Alto, US 87 572

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