Process for the production of a semiconductor component with at least two zones which form a pn-junction and possess differing conductivity types
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United States of America Patent
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-
Aug 5, 1980
Issued Date -
N/A
app pub date -
Dec 13, 1978
filing date -
Jun 22, 1976
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor component is described which includes two zones of opposite conductivity type having a pn junction therebetween, and in which one zone is formed of a monocrystalline semiconductor substrate body and the other zone is produced in the semiconductor body by a doping process, such, for example, as by an implantation or diffusing process. Before the diffusion or implantation takes place, a zone is created at or near the substrate surface which has a disturbed crystal lattice. The diffusion or implantation then takes place through the disturbed zone. A process for producing such a semiconductor component is also described. The other zone may also be produced after the disturbed crystal lattice is produced in the portion of the substrate body which portion will later become the second zone.
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