Method for removing resist from semiconductor device
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United States of America Patent
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Dec 6, 1988
Issued Date -
N/A
app pub date -
May 19, 1987
filing date -
May 20, 1986
priority date (Note) -
Expired
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Abstract
A method for removing a resist on a layer formed on a semiconductor substrate includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process. This method prevents the entry of heavy metal particles contained in the resist into the semiconductor substrate, so that a functional region formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the functional region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.
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