Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors
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United States of America Patent
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Mar 3, 1992
Grant Date -
N/A
app pub date -
Dec 3, 1990
filing date -
Jan 8, 1990
priority date (Note) -
Expired
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Abstract
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the heterobipolar transistor is grown. Subsequently, the base implantation is introduced using a dummy-emitter as a mask. Using a dielectric mask covering the region not covered by the dummy-emitter, after the removal of the dummy-emitter the emitter contact layers are selectively grown in its region. The contacting is then provided.
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