CMOS band gap reference circuit

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United States of America Patent

PATENT NO 5229710
SERIAL NO

07769200

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Abstract

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A band gap reference circuit configuration includes first and second bipolar transistors having base-to-emitter voltages. An emitter resistor is connected to the first bipolar transistor. An operational amplifier is connected to the bipolar transistors for processing a difference generated between the base-to-emitter voltages of the first and second bipolar transistors to generate a largely temperature-independent reference voltage. The bipolar transistors are parasitic transistors, and the operational amplifier is constructed in MOS technology.

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Patent Owner(s)

  • SIEMENS AKTIENGESELLSCHAFT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoffmann, Kurt Taufkirchen, DE 88 1287
Kraus, Rainer Munich, DE 14 515

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