Gallium nitride-based III-V group compound semiconductor
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United States of America Patent
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Mar 2, 1999
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app pub date -
Dec 19, 1997
filing date -
Apr 28, 1993
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Abstract
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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