Semiconductor device and method for fabricating the same

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Dec 16, 2008
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Dec 14, 2006
app pub date
Apr 27, 2006
filing date
Jun 9, 2005

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Expired

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Abstract

A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Hayashi, Shigenori	Nara, JP	84	2359
Yamamoto, Kazuhiko	Osaka, JP	147	1220

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Semiconductor device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

11411932

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PATENT NO	7465618
APP PUB NO	20060281264A1
SERIAL NO	11411932
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
December 16, 2008	US,7465618,B2 US7465618B2	GRANTED PATENT AS SECOND PUBLICATION
December 14, 2006	US,20060281264,A1 US20060281264A1	FIRST PUBLISHED PATENT APPLICATION

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11411932

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