Semiconductor device and method for fabricating the same
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United States of America Patent
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Dec 16, 2008
Grant Date -
Dec 14, 2006
app pub date -
Apr 27, 2006
filing date -
Jun 9, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
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