Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device
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United States of America Patent
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Apr 21, 2009
Grant Date -
Jul 19, 2007
app pub date -
Aug 12, 2004
filing date -
Sep 3, 2003
priority date (Note) -
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Abstract
The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate is bonded to a second carrier, exposing a second side of the semiconductor layer. Next, an annealing step is performed as a diffusionless annealing, which has the advantage that the semiconductor layer not only has a substantially even thickness, but also has a substantially flat surface. This ensures the best possible annealing action of said annealing step. Very sharp abruptness of the extensions is achieved, with very high activation of the dopants.
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