Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device

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United States of America Patent

PATENT NO 7521323
APP PUB NO 20070166922A1
SERIAL NO

10570478

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Abstract

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The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate is bonded to a second carrier, exposing a second side of the semiconductor layer. Next, an annealing step is performed as a diffusionless annealing, which has the advantage that the semiconductor layer not only has a substantially even thickness, but also has a substantially flat surface. This ensures the best possible annealing action of said annealing step. Very sharp abruptness of the extensions is achieved, with very high activation of the dopants.

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Patent Owner(s)

Patent OwnerAddress
IMECKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ponomarev, Youri Leuven , BE 23 222
Surdeanu, Radu Catalin Leuven , BE 9 127

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