Method of suppressing diffusion in a semiconductor device
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United States of America Patent
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Sep 22, 2009
Grant Date -
Mar 2, 2006
app pub date -
Oct 28, 2005
filing date -
Jun 24, 2002
priority date (Note) -
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Abstract
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.
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