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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY	6-1 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 100-8126

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Storasta, Liutauras	Yokosuka, JP	10	75
Tsuchida, Hidekazu	Yokosuka, JP	56	391

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 15, 2010	US,7737011,B2   US7737011B2	GRANTED PATENT AS SECOND PUBLICATION
January 31, 2008	US,20080026544,A1   US20080026544A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7737011

Method for improving the quality of an SiC crystal and an SiC semiconductor device

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