Method and apparatus for manufacturing a SiC single crystal film
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United States of America Patent
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Jul 23, 2013
Grant Date -
Aug 18, 2011
app pub date -
Feb 24, 2011
filing date -
Aug 29, 2008
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Abstract
A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10−3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
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