Method for doping semiconductor structures and the semiconductor device thereof

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United States of America Patent

PATENT NO 8507337
APP PUB NO 20110169049A1
SERIAL NO

13002749

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Abstract

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A method for introducing species into a strained semiconductor layer comprising: providing a substrate comprising a first region comprising an exposed strained semiconductor layer, loading the substrate in a reaction chamber, then forming a conformal first species containing-layer by vapor phase deposition (VPD) at least on the exposed strained semiconductor layer, and thereafter performing a thermal treatment, thereby diffusing at least part of the first species from the first species-containing layer into the strained semiconductor layer and activating at least part of the diffused first species in the strained semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
IMECKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Caymax, Matty Leuven, BE 28 543
Leys, Frederik Gentbrugge, BE 5 77
Loo, Roger Kessel-Lo, BE 18 489

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