Method for doping semiconductor structures and the semiconductor device thereof
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United States of America Patent
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Aug 13, 2013
Grant Date -
Jul 14, 2011
app pub date -
Jul 6, 2009
filing date -
Jul 6, 2008
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Abstract
A method for introducing species into a strained semiconductor layer comprising: providing a substrate comprising a first region comprising an exposed strained semiconductor layer, loading the substrate in a reaction chamber, then forming a conformal first species containing-layer by vapor phase deposition (VPD) at least on the exposed strained semiconductor layer, and thereafter performing a thermal treatment, thereby diffusing at least part of the first species from the first species-containing layer into the strained semiconductor layer and activating at least part of the diffused first species in the strained semiconductor layer.
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