Shielded gate trench MOSFET with increased source-metal contact
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United States of America Patent
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Dec 31, 2013
Issued Date -
N/A
app pub date -
Jan 28, 2011
filing date -
Aug 14, 2009
priority date (Note) -
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Abstract
A semiconductor device formed on a semiconductor substrate having a substrate top surface, includes: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region, at least a portion of the source region extending above the dielectric material; a contact trench that allows contact such as electrical contact between the source region and the body region; and a metal layer disposed over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.
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