Method for fabricating through substrate vias

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United States of America Patent

PATENT NO 8809188
SERIAL NO

12885311

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Abstract

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A method of fabricating through substrate vias is disclosed. In one aspect, vias are etched from the backside of the substrate down to shallow trench isolation (STI) or the pre-metal dielectric stack (PMD). Extra contacts between metal 1 contact pads and the through-wafer vias are fabricated for realizing the contact between the through wafer vias and the back-end-of-line of the semiconductor chips.

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Patent Owner(s)

Patent OwnerAddress
IMECKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beyne, Eric Leuven, BE 68 1947
Civale, Yann Leuven, BE 3 54
Swinnen, Bart Holsbeek, BE 10 223
Tezcan, Deniz Sabuncuoglu Neerwinden, BE 4 34

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