Semiconductor light emitting element and method for producing the same

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United States of America Patent

PATENT NO 8969898
SERIAL NO

13772562

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Abstract

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In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

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Patent Owner(s)

  • NICHIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kitahama, Shun Tokushima, JP 17 69
Onishi, Masahiko Anan, JP 23 258

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