Light emitting diode and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8987749
APP PUB NO 20140001483A1
SERIAL NO

13918581

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Abstract

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The disclosed technology relates to a light-emitting diode (LED) and a method of fabricating the same. In one aspect, the LED includes a GaN p-n junction formed at a junction between a p-type GaN layer and an n-type GaN layer. The LED further includes a first metal electrode layer provided on the p-type GaN layer, where the first metal electrode layer is configured to reflect light emitted by the p-n junction towards a light emitting side of the LED. The LED additionally includes an attachment layer interposed between and configured to electrically connect the p-type GaN layer and the metal electrode layer, wherein the attachment layer comprises a transition metal oxide and is configured to transmit light emitted by the p-n junction and to transmit light reflected by the metal electrode layer.

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Patent Owner(s)

  • IMEC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cavaco, Celso Leuven, BE 3 2
Rand, Barry Leuven, BE 14 163

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