Light emitting diode and method for fabricating the same
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United States of America Patent
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Mar 24, 2015
Grant Date -
Jan 2, 2014
app pub date -
Jun 14, 2013
filing date -
Jun 15, 2012
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Abstract
The disclosed technology relates to a light-emitting diode (LED) and a method of fabricating the same. In one aspect, the LED includes a GaN p-n junction formed at a junction between a p-type GaN layer and an n-type GaN layer. The LED further includes a first metal electrode layer provided on the p-type GaN layer, where the first metal electrode layer is configured to reflect light emitted by the p-n junction towards a light emitting side of the LED. The LED additionally includes an attachment layer interposed between and configured to electrically connect the p-type GaN layer and the metal electrode layer, wherein the attachment layer comprises a transition metal oxide and is configured to transmit light emitted by the p-n junction and to transmit light reflected by the metal electrode layer.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Cavaco, Celso | Leuven, BE | 3 | 2 |
Rand, Barry | Leuven, BE | 14 | 163 |
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