Integrated inductor and integrated inductor fabricating method
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United States of America Patent
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Dec 15, 2015
Grant Date -
Sep 25, 2014
app pub date -
Mar 10, 2014
filing date -
Mar 25, 2013
priority date (Note) -
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Abstract
The present invention provides an integrated inductor and an integrated inductor fabricating method. The integrated inductor comprises: a semiconductor substrate, an inductor, and a redistribution layer (RDL). The inductor is formed above the semiconductor substrate. The RDL is formed above the inductor and has a specific pattern to form a patterned ground shield (PGS). The integrated inductor fabricating method comprises: forming a semiconductor substrate; forming an inductor above the semiconductor substrate; and forming redistribution layer (RDL) having a specific pattern above the inductor to form a patterned ground shield (PGS).
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