Integrated inductor and integrated inductor fabricating method
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United States of America Patent
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Feb 2, 2016
Grant Date -
Sep 25, 2014
app pub date -
Mar 10, 2014
filing date -
Mar 21, 2013
priority date (Note) -
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Abstract
The present invention provides an integrated inductor and an integrated inductor fabricating method. The integrated inductor comprises: a semiconductor substrate, a plurality of deep trenches, and an inductor. The deep trenches are formed in the semiconductor substrate and arranged in a specific pattern, and the deep trenches are filled with a metal material to form a patterned ground shield (PGS). The inductor is formed above the semiconductor substrate. The integrated inductor fabricating method comprises: forming a semiconductor substrate; forming a plurality of deep trenches in the semiconductor substrate and arranging the deep trenches in a specific pattern; filling the deep trenches with a metal material to form a patterned ground shield (PGS); and forming an inductor above the semiconductor substrate.
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