COPPER SPUTTERING TARGET WITH FINE GRAIN SIZE AND HIGH ELECTROMIGRATION RESISTANCE AND METHODS OF MAKING THE SAME

World Intellectual Property Organization Patent

APP PUB NO WO-2008030368-A1
SERIAL NO

PCTUS2007018977

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The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt% ~ 10 wt% alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt% aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.

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Patent Owner(s)

Patent OwnerAddress
TOSOH SMD INCUSGROVE CITY OH

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Inventor(s)

Inventor Name Address
BAILEY ROBERT S 6070 PARKLAND BOULEVARD MAYFIELD HEIGHTS OHIO 44124 44124
IVANOV EUGENE Y 2924 DUNHURST COURT GROVE CITY OHIO 43123 43123
SMATHERS DAVID B COLUMBUS OH 43221
YUAN YONGWEN DUBLIN OH

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