THIN-FILM THERMISTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

World Intellectual Property Organization Patent

APP PUB NO WO-2014010591-A1
SERIAL NO

PCTJP2013068749

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Abstract

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A thin-film thermistor element provided with: an Si substrate (2); a thermistor thin film (5) formed on the Si substrate (2); and an electrode (3) comprising platinum, an alloy thereof, or the like formed on, under, or in the thermistor thin film (5); the thin-film thermistor element being characterized in that the electrode (3) is obtained by being formed as a film containing oxygen and nitrogen, and then heat-treated and caused to crystallize.

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Patent Owner(s)

Patent OwnerAddress
SEMITEC CORPJPJAPAN KAM TIN TOKYO INK SI 1 CHOME 7 NO 7 TOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address
ITO KENJI TOKYO
TOYODA TADASHI 〒1308512 東京都墨田区錦糸１－７－７ ＳＥＭＩＴＥＣ株式会社内 TOKYO ?1308512

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