METHOD FOR MANUFACTURING SOI WAFER
World Intellectual Property Organization Patent
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Abstract
The present invention is a method for manufacturing a silicon-on-insulator (SOI) wafer by forming an oxide film on a bond wafer comprising a semiconductor monocrystalline substrate, forming an ion injection layer on the bond wafer by ion-injecting through the oxide film at least one type of gas ion from among hydrogen and noble gases, bonding the ion-injected surface of the bond wafer and the surface of a base wafer via the oxide film, and then peeling away the bond wafer using the ion injection layer thereby producing a SOI wafer, wherein the oxide film formed on the back of the bond wafer is thicker than the oxide film of the bonding surface. As a result of the foregoing, a method for manufacturing SOI wafers is provided that can suppress scratching and SOI film thickness abnormalities arising due to the warped shape, which occurs if the ion injection peeling method is used for peeling, of the bond wafer after peeling from the SOI wafer.
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