C30B

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Description

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER- TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR

Subclasses

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Subclass Title
1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00)
1/02 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)
1/04 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Isothermal recrystallisation
1/06 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient
1/08 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient Zone recrystallisation

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Recent Patents

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Recent Publications

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Publication #TitleFiling DatePub DatePatent Owner
2020/0029,396 THERMAL PROCESSING TECHNIQUES FOR METALLIC MATERIALS Jun 12, 19 Jan 23, 20 , Not available
2020/0027,727 METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER Mar 28, 18 Jan 23, 20 , Sumco Corporation
2020/0027,731 FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Jul 16, 19 Jan 23, 20 , c/o TOYOTA JIDOSHA KABUSHIKI KAISHA; National University Corporation Kyoto Institute of Technology;
2020/0024,770 METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND BULK CRYSTAL Mar 19, 18 Jan 23, 20 , Not available
2020/0024,769 PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD Jul 16, 19 Jan 23, 20 , EC-Showa Denko K.K.
2020/0024,767 SYSTEMS AND METHODS FOR BINARY SINGLE-CRYSTAL GROWTH Jul 19, 18 Jan 23, 20 , GM Global Technology Operations LLC
2020/0027,730 FILM FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Jul 16, 19 Jan 23, 20 , c/o TOYOTA JIDOSHA KABUSHIKI KAISHA; National University Corporation Kyoto Institute of Technology;
2020/0024,768 EPITAXIAL DEPOSITION REACTOR WITH REFLECTOR EXTERNAL TO THE REACTION CHAMBER AND COOLING METHOD OF A SUSCEPTOR AND SUBSTRATES Sep 27, 17 Jan 23, 20 , Not available
2020/0027,919 FABRICATION METHODS Oct 26, 18 Jan 23, 20 , Microsoft Technology Licensing, LLC.
2020/0027,732 METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, FLOW STRAIGHTENING MEMBER, AND SINGLE CRYSTAL PULLING DEVICE Nov 14, 17 Jan 23, 20 , Sumco Corporation
2020/0020,528 SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER, SIC DEVICE, AND POWER CONVERSION APPARATUS Apr 06, 17 Jan 16, 20 , Mitsubishi Electric Corporation
2020/0020,571 RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFORMANCE, STABILITY, AND MANUFACTURABILITY Jul 11, 19 Jan 16, 20 , Not available
2020/0020,817 EPITAXIAL SILICON WAFER Sep 26, 19 Jan 16, 20 , Sumco Corporation
2020/0020,556 UPPER CONE FOR EPITAXY CHAMBER Sep 26, 19 Jan 16, 20 , Not available
2020/0017,993 GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL Jul 10, 19 Jan 16, 20 , Not available
2020/0017,965 SUBSTRATE-CARRIER STRUCTURE Feb 28, 18 Jan 16, 20 , Not available
2020/0017,991 MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE Apr 04, 17 Jan 16, 20 , Mitsubishi Electric Corporation
2020/0017,992 INDIUM PHOSPHIDE SINGLE-CRYSTAL BODY AND INDIUM PHOSPHIDE SINGLE-CRYSTAL SUBSTRATE Jul 03, 18 Jan 16, 20 , SUMITOMO ELECTRIC INDUSTRIES LTD.
2020/0020,586 SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS Sep 25, 19 Jan 16, 20 , Semiconductor Components Industries, LLC
2020/0020,777 SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER Dec 22, 17 Jan 16, 20 , EC-Showa Denko K.K.; Denso Corporation;

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