C30B

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Description

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER- TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR

Subclasses

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Subclass Title
1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00)
1/02 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)
1/04 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Isothermal recrystallisation
1/06 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient
1/08 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient Zone recrystallisation

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Recent Patents

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Recent Publications

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Publication #TitleFiling DatePub DatePatent Owner
2019/0341,249 THREE-DIMENSIONAL ASSEMBLED ACTIVE MATERIAL FROM TWO-DIMENSIONAL SEMICONDUCTOR FLAKES FOR OPTOELECTRONIC DEVICES Aug 30, 16 Nov 07, 19 , TOYOTA MOTOR EUROPE
2019/0338,432 COPPER CRYSTAL PARTICLES HAVING A HIGHLY PREFERRED ORIENTATION AND A PREPARATION METHOD THEREOF Sep 26, 17 Nov 07, 19 , Not available
2019/0338,443 METHOD OF PRODUCING EPITAXIAL SILICON WAFER Nov 20, 17 Nov 07, 19 , Sumco Corporation
2019/0338,442 APPARATUS FOR CONTROLLING HEAT FLOW WITHIN A SILICON MELT Jul 16, 19 Nov 07, 19 , Not available
2019/0338,444 SHIELDING MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTALS Apr 23, 19 Nov 07, 19 , EC-Showa Denko K.K.
2019/0330,763 FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS Jul 05, 19 Oct 31, 19 , Not available
2019/0330,760 SILICON SINGLE CRYSTAL PULLING CONDITION CALCULATION PROGRAM, SILICON SINGLE CRYSTAL HOT ZONE IMPROVEMENT METHOD, AND SILICON SINGLE CRYSTAL GROWING METHOD Dec 07, 17 Oct 31, 19 , Sumco Corporation
2019/0333,993 INTEGRATED CIRCUITS HAVING CONVERTED SELF-ALIGNED EPITAXIAL ETCH STOP Apr 25, 18 Oct 31, 19 , Globalfoundries Inc.
2019/0334,072 THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT Dec 22, 17 Oct 31, 19 , Not available
2019/0335,548 SUSCEPTORS FOR INDUCTION HEATING WITH THERMAL UNIFORMITY Jul 10, 19 Oct 31, 19 , Not available
2019/0330,714 SUPERALLOY BASED ON NICKEL, MONOCRYSTALLINE BLADE AND TURBOMACHINE Oct 24, 17 Oct 31, 19 , SAFRAN AIRCRAFT ENGINES; SAFRAN AIRCRAFT ENGINES; Office National D'Etudes Et De Recherches Aerospatiales-ONERA; SAFRAN HELICOPTER ENGINES;
2019/0330,764 CRUCIBLE AND SiC SINGLE CRYSTAL GROWTH APPARATUS Apr 23, 19 Oct 31, 19 , EC-Showa Denko K.K.
2019/0330,765 HEAT-INSULATING SHIELD MEMBER AND SINGLE CRYSTAL MANUFACTURING APPARATUS HAVING THE SAME Apr 19, 19 Oct 31, 19 , EC-Showa Denko K.K.
2019/0330,761 SiC SINGLE CRYSTAL GROWTH APPARATUS AND GROWTH METHOD OF SiC SINGLE CRYSTAL Apr 19, 19 Oct 31, 19 , EC-Showa Denko K.K.
2019/0330,759 A METHOD OF FABRICATING A TURBINE ENGINE PART Jun 14, 17 Oct 31, 19 , Not available
2019/0331,603 SiC WAFER DEFECT MEASURING METHOD, REFERENCE SAMPLE, AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER Dec 07, 17 Oct 31, 19 , EC-Showa Denko K.K.
2019/0330,077 TUNGSTEN PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPULATION Apr 30, 18 Oct 31, 19 , Not available
2019/0330,762 APPARATUS FOR MANUFACTURING COMPOUND SINGLE CRYSTAL, METHOD FOR MANUFACTURING COMPOUND SINGLE CRYSTAL, AND GaN SINGLE CRYSTAL Feb 08, 18 Oct 31, 19 , KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
2019/0333,998 SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE Dec 19, 18 Oct 31, 19 , Not available
2019/0333,778 APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES Jun 11, 19 Oct 31, 19 , Not available

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