C30B

Technology

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Description

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER- TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR

Subclasses

SubclassTitle
1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00)
1/02 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)
1/04 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Isothermal recrystallisation
1/06 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient
1/08 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient Zone recrystallisation
1/10 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by solid state reactions or multi-phase diffusion
1/12 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by pressure treatment during the growth
3/00 Unidirectional demixing of eutectoid materials
5/00 Single-crystal growth from gels (under a protective fluid C30B 27/00)
5/02 Single-crystal growth from gels (under a protective fluid C30B 27/00) with addition of doping materials
7/00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00)
7/02 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by evaporation of the solvent
7/04 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by evaporation of the solvent using aqueous solvents
7/06 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by evaporation of the solvent using non-aqueous solvents
7/08 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by cooling of the solution
7/10 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by application of pressure, e.g. hydrothermal processes
7/12 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by electrolysis
7/14 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) the crystallising materials being formed by chemical reactions in the solution
9/00 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00)
9/02 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) by evaporation of the molten solvent

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2025/0118,552 METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYEROct 09, 24Apr 10, 25Commissariat A L' Energie Atomique Et Aux Energies Alternatives; Centre National De La Recherche Scientifique (CNRS); UNIVERSITE GRENOBLE ALPES; INSTITUT POLYTECHNIQUE DE GRENOBLE;
2025/0118,554 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE, AND CONTROL DEVICEJan 26, 23Apr 10, 25KYOCERA CORPORATION
2025/0116,030 Two-Dimensional Halide Perovskite NanowiresOct 09, 24Apr 10, 25Not available
2025/0116,031 SCINTILLATION CRYSTAL AND PREPARATION METHOD AND PREPARATION DEVICE THEREOFOct 01, 24Apr 10, 25MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
2025/0116,032 HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICEDec 03, 24Apr 10, 25SICC CO., LTD.
2025/0116,033 SiC EPITAXIAL WAFERDec 19, 24Apr 10, 25Resonac Corporation
2025/0112,042 METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYERSep 27, 24Apr 03, 25Not available
2025/0112,043 LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTSDec 20, 23Apr 03, 25Applied Materials Inc.
2025/0109,520 MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON ROD AND SINGLE-CRYSTAL FURNACEDec 22, 23Apr 03, 25Not available
2025/0109,521 METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCRYSTALLINE SILICON, AND DEVICE FOR GROWING CZOCHRALSKI MONOCRYSTALLINE SILICONSep 24, 24Apr 03, 25ZING SEMICONDUCTOR CORPORATION
2025/0109,522 GROWTH DEVICE OF SILICON CARBIDE SINGLE CRYSTAL AND GROWTH METHODDec 12, 24Apr 03, 25SUZHOU UKING SEMICONDUCTOR TECHNOLOGY CO., LTD.
2025/0109,523 METHOD FOR MANUFACTURING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVING PEROVSKITE STRUCTURE, AND METHOD FOR TRANSFERRING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVING PEROVSKITE STRUCTUREMar 08, 22Apr 03, 25University of Ulsan Foundation for Industry Cooperation
2025/0109,524 METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSICALLY CARBON-DOPED GROUP III-NITRIDE FILMSSep 29, 23Apr 03, 25Not available
2025/0109,525 HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICEDec 05, 24Apr 03, 25SICC CO., LTD.
2025/0109,526 SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFERDec 13, 24Apr 03, 25Resonac Corporation

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