PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrography, sensitive layers or processes G03G)
| Subclass | Title |
|---|---|
| 1/00 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof |
| 1/20 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof |
| 1/22 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof |
| 1/24 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof Reflection masks; Preparation thereof |
| 1/26 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof |
| 1/28 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof |
| 1/29 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Rim PSM or outrigger PSM; Preparation thereof |
| 1/30 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof |
| 1/32 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof |
| 1/34 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Phase-edge PSM, e.g. chromeless PSM; Preparation thereof |
| 1/36 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes |
| 1/38 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof |
| 1/40 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate |
| 1/42 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Alignment or registration features, e.g. alignment marks on the mask substrates |
| 1/44 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales |
| 1/46 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Antireflective coatings |
| 1/48 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Protective coatings |
| 1/50 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Mask blanks not covered by groups G03F 1/2-G03F 1/26 ; Preparation thereof |
| 1/52 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Reflectors |
| 1/54 | Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Absorbers, e.g. opaque materials |
| Publication # | Title | Filing Date | Pub Date | Patent Owner |
|---|---|---|---|---|
| 2024/0126,159 | PHOTOGRAPHIC COLOR IMAGE USING BLACK AND WHITE EMULSION | Oct 07, 22 | Apr 18, 24 | Not available |
| 2024/0126,160 | REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK | Feb 08, 22 | Apr 18, 24 | Not available |
| 2024/0126,161 | EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF | May 19, 23 | Apr 18, 24 | Samsung Electronics Co., Ltd. |
| 2024/0126,162 | PHASE SHIFT BLANKMASK AND PHOTOMASK FOR EUV LITHOGRAPHY | Nov 17, 22 | Apr 18, 24 | S&S TECH CO., LTD. |
| 2024/0126,163 | PHASE SHIFT BLANKMASK AND PHOTOMASK FOR EUV LITHOGRAPHY | Jan 24, 23 | Apr 18, 24 | S&S TECH CO., LTD. |
| 2024/0126,164 | Reticle Constructions and Photo-Processing Methods | Dec 19, 23 | Apr 18, 24 | Micron Technology Inc. |
| 2024/0126,165 | IMPRINT APPARATUS AND PRODUCT MANUFACTURING METHOD | Dec 20, 23 | Apr 18, 24 | Not available |
| 2024/0126,166 | FREEFORM OPTICAL SUBSTRATES IN WAVEGUIDE DISPLAYS | Dec 28, 23 | Apr 18, 24 | Not available |
| 2024/0126,167 | RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN | Nov 15, 21 | Apr 18, 24 | JSR Corporation |
| 2024/0126,168 | ONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | Sep 12, 23 | Apr 18, 24 | Shin-Etsu Chemical Co., Ltd. |
| 2024/0126,169 | PHOTOSENSITIVE RESIN COMPOSITION AND DISPLAY DEVICE | Sep 27, 23 | Apr 18, 24 | Not available |
| 2024/0126,170 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND PHOTORESIST COMPOSITION | May 22, 23 | Apr 18, 24 | Not available |
| 2024/0126,171 | HOLLOW STRUCTURE, ELECTRONIC COMPONENT USING SAME, AND NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION | Dec 27, 21 | Apr 18, 24 | TORAY INDUSTRIES, INC. |
| 2024/0126,172 | PHOTORESIST UNDERLAYER COMPOSITION | Sep 16, 22 | Apr 18, 24 | Not available |
| 2024/0126,173 | FLEXOGRAPHIC PRINTING PLATE PRECURSOR AND MANUFACTURING METHOD OF FLEXOGRAPHIC PRINTING PLATE | Dec 21, 23 | Apr 18, 24 | FUJIFILM Corporation |
| 2024/0126,174 | LITHOGRAPHY | Dec 28, 23 | Apr 18, 24 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 2024/0126,175 | METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND STORAGE MEDIUM | Sep 20, 23 | Apr 18, 24 | Not available |
| 2024/0126,176 | SPATIAL LIGHT MODULATION UNIT AND EXPOSURE APPARATUS | Dec 22, 23 | Apr 18, 24 | Nikon Corporation |
| 2024/0126,177 | EXPOSURE DEVICE AND METHOD | Dec 26, 23 | Apr 18, 24 | Not available |
| 2024/0126,178 | EXPOSURE APPARATUS, CONTROL METHOD, AND DEVICE MANUFACTURING METHOD | Dec 15, 23 | Apr 18, 24 | Nikon Corporation |
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