G03F

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Description

PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrography, sensitive layers or processes G03G)

Subclasses

SubclassTitle
1/00 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
1/20 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
1/22 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
1/24 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof Reflection masks; Preparation thereof
1/26 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof
1/28 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
1/29 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Rim PSM or outrigger PSM; Preparation thereof
1/30 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
1/32 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
1/34 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
1/36 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
1/38 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
1/40 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
1/42 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Alignment or registration features, e.g. alignment marks on the mask substrates
1/44 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales 
1/46 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Antireflective coatings
1/48 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof Protective coatings
1/50 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Mask blanks not covered by groups G03F 1/2-G03F 1/26 ; Preparation thereof
1/52 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Reflectors
1/54 Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Absorbers, e.g. opaque materials

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Recent Patents

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2025/0114,980 IMPRINTING APPARATUSNov 30, 24Apr 10, 25Not available
2025/0116,615 EUV MicroscopeDec 16, 24Apr 10, 25Not available
2025/0116,800 FLEXIBLE MICROPOROUS MULTI-RESONANT PLASMONICS MESHESNov 04, 22Apr 10, 25Not available
2025/0116,920 ELECTROCONDUCTIVE-FILM-COATED SUBSTRATE AND REFLECTIVE MASK BLANKDec 16, 24Apr 10, 25AGC Inc.
2025/0116,921 ORIGINAL PLATE, RIBLET MOLDING METHOD, RIBLET TRANSFER SHEET AND METHOD FOR MANUFACTURING THE SAME, AND TOOLJan 24, 22Apr 10, 25Nikon Corporation
2025/0116,922 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERNDec 18, 24Apr 10, 25JSR Corporation
2025/0116,923 RESIST COMPOSITION FOR PHOTOLITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAMESep 16, 24Apr 10, 25Inha University Research and Business Foundation
2025/0116,924 RESIST COMPOSITION AND PATTERN FORMING PROCESSOct 01, 24Apr 10, 25Shin-Etsu Chemical Co., Ltd.
2025/0116,925 RESIST COMPOSITION AND PATTERN FORMING PROCESSOct 02, 24Apr 10, 25Shin-Etsu Chemical Co., Ltd.
2025/0116,926 RESIST COMPOSITION AND PATTERN FORMING PROCESSOct 02, 24Apr 10, 25Shin-Etsu Chemical Co., Ltd.
2025/0116,927 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODSOct 07, 24Apr 10, 25Not available
2025/0116,928 SUBSTRATE COATING RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERNNov 20, 24Apr 10, 25Not available
2025/0116,929 RESIST COMPOSITION AND PATTERN FORMING PROCESSSep 30, 24Apr 10, 25Shin-Etsu Chemical Co., Ltd.
2025/0116,930 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ELEMENT, PRINTED CIRCUIT BOARD, AND METHOD FOR MANUFACTURING PRINTED CIRCUIT BOARDJan 18, 23Apr 10, 25Not available
2025/0116,931 PHOTORESIST COMPOSITIONOct 10, 23Apr 10, 25TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
2025/0116,932 THIOL-CONTAINING PHOTORESIST COMPOSITIONS FOR EXTREME ULTRAVIOLET LITHOGRAPHYMar 11, 24Apr 10, 25Not available
2025/0116,933 MULTIBLOCK COPOLYMERS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODSOct 04, 23Apr 10, 25Not available
2025/0116,934 ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESSOct 01, 24Apr 10, 25Shin-Etsu Chemical Co., Ltd.
2025/0116,935 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERNOct 04, 24Apr 10, 25JSR Corporation
2025/0116,936 PHOTOCURABLE RESIN COMPOSITION CONTAINING SELF-CROSSLINKABLE POLYMERFeb 21, 23Apr 10, 25Nissan Chemical Corporation

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