C23F 1/30

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Class  C23F : NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES


Subclass 1/30: Etching metallic material by chemical means Etching compositions (C23F 1/44 takes precedence) Aqueous compositions Acidic compositions (C23F 1/42 takes precedence) for etching other metallic material

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
12150386 Ruthenium removal composition and method of producing magnetoresistive random access memoryAug 16, 22Nov 19, 24FUJIFILM Corporation
12104260 Method for producing semiconductor element and chemical solution to be used in method for producing semiconductor elementDec 14, 21Oct 01, 24Tokyo Ohka Kogyo Co. LTD
12080801 Method of controlling oxygen vacancy concentration in a semiconducting metal oxideJan 10, 22Sep 03, 24The Board of Trustees of the University of Illinois
11932948 Electroless nickel etch chemistry, method of etching and pretreatmentOct 27, 21Mar 19, 24Hutchinson Technology Incorporated
11918433 Surface treatment for an implant surfaceAug 21, 19Mar 05, 24Biomet 3i LLC
11859293 Vanishing viewing windows apparatuses and methodsApr 04, 21Jan 02, 24Electric Mirror, LLC
11862474 Substrate processing apparatus and substrate processing methodNov 25, 20Jan 02, 24Tokyo Electron Limited
11802342 Methods for wet atomic layer etching of rutheniumFeb 17, 22Oct 31, 23Tokyo Electron Limited
11795550 Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the sameMay 06, 21Oct 24, 23Samsung Electronics Co. Ltd.; SOULBRAIN CO., LTD;
11767595 Chemical liquid, chemical liquid container, and method for treating substrateJan 23, 23Sep 26, 23FUJIFILM Corporation
11732365 Composition for removing rutheniumNov 13, 19Aug 22, 23Kanto Kagaku Kabushiki Kaisha
11658034 Patterning platinum by alloying and etching platinum alloyApr 20, 21May 23, 23Texas Instruments Incorporated
11536520 Modified surface for condensationFeb 02, 19Dec 27, 22INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT MADRAS)
11456412 Ruthenium removal composition and method of producing magnetoresistive random access memoryJun 02, 20Sep 27, 22FUJIFILM Corporation
11441229 Method for selectively removing nickel platinum materialJun 18, 19Sep 13, 22Entegris Inc.
11384437 Etchant composition and forming method of wiring using etchant compositionApr 21, 20Jul 12, 22Samsung Display Co., Ltd.
11384253 Dual additive composition for polishing memory hard disks exhibiting edge roll offDec 30, 19Jul 12, 22CMC Materials, Inc.
11346008 Ruthenium etching composition and methodNov 22, 19May 31, 22Entegris Inc.
11225721 Thin film etchant composition and method of forming metal pattern by using the sameFeb 25, 19Jan 18, 22Samsung Display Co., Ltd.; DONGWOO FINE-CHEM CO., LTD.;
11180826 Tin stripping methodMar 06, 19Nov 23, 21UWIN NANOTECH, CO., LTD.

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2024/0197,444 SURFACE TREATMENT FOR AN IMPLANT SURFACEMar 01, 24Jun 20, 24Not available
2024/0191,360 CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEDec 04, 23Jun 13, 24Not available
2024/0191,361 CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEDec 04, 23Jun 13, 24Not available
2024/0191,362 CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEDec 04, 23Jun 13, 24Not available
2023/0121,246 METHODS FOR WET ETCHING OF NOBLE METALSNov 14, 22Apr 20, 23Not available
2022/0372,631 METHOD FOR SELECTIVELY REMOVING NICKEL PLATINUM MATERIALAug 05, 22Nov 24, 22Not available
2022/0127,729 Electroless Nickel Etch Chemistry, Method Of Etching And PretreatmentOct 27, 21Apr 28, 22Not available
2021/0020,955 PLATINUM-BASED ALLOY CATALYST AND PREPARATION METHOD THEREFOR, MEMBRANE ELECTRODE, AND FUEL CELLMar 22, 19Jan 21, 21QINGDAO CHUANGQI XINNENG CATALYSIS TECHNOLOGY CO., LTD
2020/0248,318 ETCHANT COMPOSITION AND FORMING METHOD OF WIRING USING ETCHANT COMPOSITIONApr 21, 20Aug 06, 20Samsung Display Co., Ltd.
2020/0190,672 ETCHING SOLUTION, METHOD FOR PROCESSING OBJECT TO BE PROCESSED, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENTDec 09, 19Jun 18, 20Not available
2020/0010,959 METHOD FOR SELECTIVELY REMOVING NICKEL PLATINUM MATERIALJun 18, 19Jan 09, 20Not available
2019/0274,791 TITANIUM NANO-SCALE ETCHING ON AN IMPLANT SURFACEDec 17, 18Sep 12, 19Not available
2019/0255,317 PRODUCTION METHOD FOR A RING ELECTRODEFeb 18, 19Aug 22, 19Heraeus Deutschland GmbH & Co. KG
2019/0085,209 COMPOSITION FOR TUNGSTEN CMPSep 14, 18Mar 21, 19Not available
2018/0371,625 ETCHANT COMPOSITION AND FORMING METHOD OF WIRING USING ETCHANT COMPOSITIONMay 04, 18Dec 27, 18Not available
2018/0163,311 ADDITIVE METAL DEPOSITION PROCESSFeb 09, 18Jun 14, 18Not available
2017/0314,140 Method for the Wet Chemical Polishing of Molded Zinc PartsAug 27, 15Nov 02, 17POLIGRAT GMBH
2017/0222,138 RUTHENIUM REMOVAL COMPOSITION AND METHOD OF PRODUCING MAGNETORESISTIVE RANDOM ACCESS MEMORYApr 17, 17Aug 03, 17FUJIFILM CORPORATION
2016/0053,386 ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCTOct 30, 15Feb 25, 16FUJIFILM CORPORATION

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