C30B 1/02

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Class  C30B : SINGLE-CRYSTAL GROWTH


Subclass 1/02: Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
11946154 Dielectric material, device comprising dielectric material, and method of preparing dielectric materialDec 18, 20Apr 02, 24Samsung Electronics Co. Ltd.
11846836 Thin-film electro-optical waveguide modulator deviceMay 03, 21Dec 19, 23Applied Materials Inc.
11827998 Facile etching for single crystal cathode materialsMay 26, 21Nov 28, 23Worcester Polytechnic Institute
11810785 Thin film crystallization processMay 10, 18Nov 07, 23LUX SEMICONDUCTORS, INC.
11758817 Film structure and method for manufacturing the sameMay 31, 17Sep 12, 23KRYSTAL INC.
11680333 Defect engineered high quality multilayer epitaxial graphene growth with thickness controllabilityFeb 14, 14Jun 20, 23University of South Carolina
11674237 Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layersMay 14, 19Jun 13, 23International Business Machine Corporation
11591710 Crystallization of amorphous multicomponent ionic compoundsOct 01, 20Feb 28, 23Wisconsin Alumni Research Foundation
11551929 Method of growing crystalline layers on amorphous substrates using two-dimensional and atomic layer seedsMar 25, 21Jan 10, 23The Penn State Research Foundation
11524486 Substrate for epitaxtail, growth and method for producing sameOct 21, 16Dec 13, 22Toyo Kohan Co. Ltd.; Sumitomo Electric Industries Ltd.;
11408092 Method for heat-treating silicon single crystal waferDec 25, 18Aug 09, 22Shin-Etsu Handotai Co Ltd.
11332847 Methods for low energy inorganic material synthesisDec 29, 16May 17, 22Board of Trustees Rutgers The State University of New Jersey
11282978 Crystallisation of amorphous silicon from a silicon-rich aluminium substrateApr 21, 17Mar 22, 22Centre National De La Recherche Scientifique (CNRS); UNIVERSITÉ DE STRASBOURG;
11236440 Copper-zinc-aluminum-iron single crystal alloy materialDec 03, 19Feb 01, 22XIAMEN UNIVERSITY
11187964 Infrared non-linear optical crystal, preparation process and application thereofMay 10, 18Nov 30, 21FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES
11133390 Low temperature, thin film crystallization method and products prepared therefromMar 15, 13Sep 28, 21The Boeing Company
11087982 Method and system for fabricating a semiconductor deviceMay 14, 19Aug 10, 21WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
11072869 Manganese/nickel composite oxide particles and process for producing the manganese nickel composite oxide particles, positive electrode active substance particles for non-aqueous electrolyte secondary batteries and process for producing the positive electrode active substance particles, and non-aqueous electrolyte secondary batteryAug 08, 18Jul 27, 21Toda Kogyo Corporation
11059093 Additively manufactured core for use in casting an internal cooling circuit of a gas turbine engine componentDec 12, 18Jul 13, 21RAYTHEON TECHNOLOGIES CORPORATION
11049717 Method for fabricating ultra-thin graphite film on silicon carbide substrate from siloxane-coupling-group-containing polyamic acid solutionDec 21, 18Jun 29, 21NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2024/0044,040 PREPARATION OF SINGLE-CRYSTAL LAYERED CATHODE MATERIALS FOR LITHIUM- AND SODIUM-ION BATTERIESAug 05, 22Feb 08, 24Not available
2024/0003,042 SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSITION EPITAXIAL GROWTH PROCESSAug 31, 21Jan 04, 24Vida Products
2023/0349,065 SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUSMar 22, 23Nov 02, 23Kokusai Electric Corporation
2022/0325,432 Nano And Quantum Sized Particles From Atomically Thin Transition Metal Dichalcogenides And Related MethodsFeb 18, 22Oct 13, 22Not available
2022/0228,288 SINGLE CRYSTAL CATHODE MATERIALS USING MICROWAVE PLASMA PROCESSINGJan 18, 22Jul 21, 22Not available
2021/0310,149 SINGLE CRYSTALLINE METAL FOIL AND MANUFACTURING METHOD THEREFORJun 22, 21Oct 07, 21Not available
2021/0198,801 DIELECTRIC MATERIAL, DEVICE COMPRISING DIELECTRIC MATERIAL, AND METHOD OF PREPARING DIELECTRIC MATERIALDec 18, 20Jul 01, 21Samsung Electronics Co., Ltd.
2021/0189,586 SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALSDec 18, 20Jun 24, 21Not available
2021/0062,366 METHOD FOR HEAT-TREATING SILICON SINGLE CRYSTAL WAFERDec 25, 18Mar 04, 21Shin-Etsu Handotai Co Ltd.
2020/0370,199 METHOD FOR MAKING MNBI2TE4 SINGLE CRYSTALJul 30, 19Nov 26, 20Not available
2020/0157,703 BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICONJul 25, 19May 21, 20Mossey Creek Technologies, Inc.
2019/0242,028 SINGLE CRYSTALLINE METAL FOIL AND MANUFACTURING METHOD THEREFORJul 12, 17Aug 08, 19Not available
2019/0226,115 METHOD FOR PREPARATION OF HIGH-QUALITY GRAPHENE ON THE SURFACE OF SILICON CARBIDEJun 30, 17Jul 25, 19UNIWERSYTET JAGIELLONSKI
2019/0106,805 CRYSTALLIZATION OF AMORPHOUS MULTICOMPONENT IONIC COMPOUNDSOct 10, 17Apr 11, 19Not available
2018/0298,519 METHOD FOR PREPARING SiC SINGLE CRYSTALApr 05, 18Oct 18, 18Shin-Etsu Chemical Co. Ltd.
2018/0282,896 FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFORJun 01, 18Oct 04, 18Youtec Co. Ltd.; SAE MAGNETICS (H.K.) LTD.;
2017/0253,989 METHOD OF GROWING CRYSTAL IN RECESS AND PROCESSING APPARATUS USED THEREFORMar 06, 17Sep 07, 17TOKYO ELECTRON LIMITED
2016/0138,182 METHODS FOR FORMING MIXED METAL OXIDE EPITAXIAL FILMSNov 18, 14May 19, 16WISCONSIN ALUMNI RESEARCH FOUNDATION
2015/0340,382 DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICENov 29, 13Nov 26, 15BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.,

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