Class G11C : STATIC STORES
Subclass 7/02: Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) with means for avoiding parasitic signals
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 12254921 | Sense amplifier circuit architecture | Jan 08, 23 | Mar 18, 25 | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 12243575 | Memory system having combined high density, low bandwidth and low density, high bandwidth memories | Nov 21, 23 | Mar 04, 25 | Apple Inc. |
| 12236111 | Maintenance operations in a DRAM | Mar 20, 24 | Feb 25, 25 | RAMBUS INC. |
| 12237042 | Data receiving circuit, data receiving system and memory device | Sep 26, 22 | Feb 25, 25 | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 12237050 | Three-dimensional (3-D) write assist scheme for memory cells | Jul 07, 22 | Feb 25, 25 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 12228961 | Memory system using asymmetric source-synchronous clocking | Apr 08, 24 | Feb 18, 25 | RAMBUS INC. |
| 12198753 | Memory device having row decoder array architecture | Sep 27, 22 | Jan 14, 25 | Samsung Electronics Co. Ltd. |
| 12198781 | Storage device with eye open monitoring (EOM) circuit and method to control | Jul 18, 22 | Jan 14, 25 | SAMSUNG ELECTRONICS CO. LTD. |
| 12190929 | Memory array, memory cell, and data read and write method thereof | Nov 09, 22 | Jan 07, 25 | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 12184280 | Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance | Jun 27, 23 | Dec 31, 24 | Not available |
| 12176016 | Memory device having bitline segmented into bitline segments and related method for operating memory device | Sep 22, 23 | Dec 24, 24 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 12165732 | Sense amplifier | Aug 10, 23 | Dec 10, 24 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 12154616 | Memory device and operation method thereof | Oct 24, 23 | Nov 26, 24 | Samsung Electronics Co. Ltd. |
| 12148495 | Detect whether die or channel is defective to confirm temperature data | Mar 06, 23 | Nov 19, 24 | Micron Technology Inc. |
| 12136922 | Integrated resistor network and method for fabricating the same | Nov 17, 23 | Nov 05, 24 | Infineon Technologies LLC |
| 12119047 | Readout circuit structure | Jun 23, 22 | Oct 15, 24 | CHANXIN MEMORY TECHNOLOGIES, INC. |
| 12112791 | Sense amplifying circuit and method, and semiconductor memory | Jul 14, 22 | Oct 08, 24 | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 12100459 | Semiconductor device | Jun 13, 23 | Sep 24, 24 | Kioxia Corporation |
| 12073884 | Storage device and operating method thereof | Jun 30, 22 | Aug 27, 24 | Samsung Electronics Co. Ltd. |
| 12073899 | Track charge loss based on signal and noise characteristics of memory cells collected in calibration operations | Nov 29, 21 | Aug 27, 24 | Micron Technology Inc. |
| Publication # | Title | Filing Date | Pub Date | Patent Owner |
|---|---|---|---|---|
| 2025/0095,704 | MEMORY DEVICE HAVING TRACKING WORD LINE WITH ADJUST CIRCUIT, METHOD OF OPERATING SAME AND METHOD OF MANUFACTURING SAME | Sep 21, 23 | Mar 20, 25 | Not available |
| 2025/0070,782 | APPARATUSES AND METHODS FOR IDENTIFYING MEMORY DEVICES OF A SEMICONDUCTOR DEVICE SHARING AN EXTERNAL RESISTANCE | Nov 14, 24 | Feb 27, 25 | Not available |
| 2025/0022,504 | MEMORY DEVICE AND OPERATION METHOD THEREOF | Sep 30, 24 | Jan 16, 25 | Not available |
| 2024/0412,795 | TRACK CHARGE LOSS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED IN CALIBRATION OPERATIONS | Aug 19, 24 | Dec 12, 24 | Not available |
| 2024/0379,171 | MEMORY DEVICE AND AN OPERATION METHOD THEREOF | Aug 15, 23 | Nov 14, 24 | Not available |
| 2024/0371,448 | SEMICONDUCTOR DEVICE | Jul 17, 24 | Nov 07, 24 | Kioxia Corporation |
| 2024/0347,634 | Memory Device Comprising an Electrically Floating Body Transistor and Methods of Using | Jun 24, 24 | Oct 17, 24 | Not available |
| 2024/0331,740 | USING EMBEDDED SWITCHES FOR REDUCING CAPACITIVE LOADING ON A MEMORY SYSTEM | Mar 12, 24 | Oct 03, 24 | Taiwan Semiconductor Manufacturing Company Limited |
| 2024/0321,339 | VARIABLE WIDTH MEMORY MODULE SUPPORTING ENHANCED ERROR DETECTION AND CORRECTION | Apr 12, 24 | Sep 26, 24 | Not available |
| 2024/0304,272 | ELECTRONIC DEVICES RELATED TO COMPENSATION OF MONITORING SIGNALS | Jun 06, 23 | Sep 12, 24 | SK HYNIX INC. |
| 2024/0296,896 | READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION | May 07, 24 | Sep 05, 24 | Not available |
| 2024/0282,354 | PROTOCOL FOR MEMORY POWER-MODE CONTROL | Feb 28, 24 | Aug 22, 24 | Not available |
| 2024/0282,388 | MEMORY DEVICE FOR PERFORMING READ OPERATION AND OPERATING METHOD THEREOF | Jul 21, 23 | Aug 22, 24 | Not available |
| 2024/0265,951 | CURRENT-TO-VOLTAGE CONVERTER COMPRISING COMMON MODE CIRCUIT | Apr 20, 23 | Aug 08, 24 | Not available |
| 2024/0257,843 | MEMORY DEVICE AND OPERATING METHOD THEREOF | Aug 07, 23 | Aug 01, 24 | SAMSUNG ELECTRONICS CO., LTD |
| 2024/0185,915 | OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS | Jan 04, 24 | Jun 06, 24 | Not available |
| 2024/0177,744 | APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY | Oct 05, 23 | May 30, 24 | Micron Technology Inc. |
| 2024/0161,791 | APPARATUSES AND METHODS FOR INPUT BUFFER DATA FEEDBACK EQUALIZATION CIRCUITS | Nov 15, 22 | May 16, 24 | Micron Technology Inc. |
| 2024/0153,542 | VOLTAGE OVERSHOOT MITIGATION | Nov 04, 22 | May 09, 24 | Not available |
| 2024/0096,384 | PREAMBLE DETECTION CIRCUIT, OPERATION METHOD THEREOF, AND MEMORY DEVICE | May 30, 23 | Mar 21, 24 | Not available |
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