| RE49546 | Power semiconductor device with charge balance design | Nov 06, 20 | Jun 06, 23 | Infineon Technologies AG |
| RE49167 | Passivation structure for semiconductor devices | Nov 12, 19 | Aug 09, 22 | Wolfspeed, Inc. |
| 9997603 | Semiconductor device and method of manufacturing semiconductor device | Aug 25, 17 | Jun 12, 18 | FUJI ELECTRIC CO., LTD. |
| 9997709 | Method for manufacturing transistor according to selective printing of dopant | Jul 14, 15 | Jun 12, 18 | Dongguk University Industry Academic Cooperation Foundation |
| 9991175 | Method for estimating depth of latent scratches in SiC substrates | Mar 10, 15 | Jun 05, 18 | Toyo Tanso Co. Ltd. |
| 9991119 | Heat treatment method and heat treatment apparatus for semiconductor substrate | Sep 22, 16 | Jun 05, 18 | CANON ANELVA CORPORATION |
| 9984894 | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions | Aug 03, 11 | May 29, 18 | Cree, Inc.; Auburn University; |
| 9985128 | Semiconductor device | Aug 03, 17 | May 29, 18 | Panasonic Intellectual Property Management Co., Ltd. |
| 9984879 | Silicon carbide semiconductor device and method for manufacturing same | Apr 26, 17 | May 29, 18 | Sumitomo Electric Industries Ltd. |
| 9984884 | Method of manufacturing semiconductor device with a multi-layered gate dielectric | Dec 20, 16 | May 29, 18 | Renesas Electronics Corporation |
| 9978598 | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device | Jan 27, 17 | May 22, 18 | FUJI ELECTRIC CO., LTD. |
| 9978843 | Silicon carbide semiconductor device | Aug 01, 17 | May 22, 18 | Fuji Electric Co. Ltd. |
| 9978597 | Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure | Jun 06, 14 | May 22, 18 | Kwansei Gakuin Educational Foundation |
| 9978842 | Semiconductor device and method for manufacturing the same | Mar 16, 16 | May 22, 18 | KABUSHIKI KAISHA TOSHIBA; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; Fuji Electric Co. Ltd.; |
| 9978832 | Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region | Aug 23, 17 | May 22, 18 | The Goverment of the United States of America as represented by the Secretary of the Navy |
| 9972499 | Method for forming metal-semiconductor alloy using hydrogen plasma | Mar 09, 16 | May 15, 18 | Fuji Electric Co. Ltd. |
| 9972712 | Semiconductor device | Aug 31, 16 | May 15, 18 | KABUSHIKI KAISHA TOSHIBA |
| 9970914 | Gas sensors with contact pads | Apr 06, 15 | May 15, 18 | The United States of America as represented by the Administrator of National Aeronautics and Space Administration |
| 9972677 | Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls | Oct 31, 16 | May 15, 18 | Cree, Inc. |
| 9972674 | Schottky barrier diode and manufacturing method thereof | Oct 19, 15 | May 15, 18 | 501 Toyota Jidosha Kabushiki Kaisha; DENSO Corporation; |