H01L 21/033

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
RE50029 Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therofApr 14, 21Jul 02, 24Micron Technology Inc.
RE47170 Method of forming semiconductor patternsJul 12, 13Dec 18, 18ASM IP Holding B.V.
9996007 Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the compositionJul 12, 16Jun 12, 18SK INNOVATION CO., LTD.; SK Global Chemical Co., Ltd.;
9991156 Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogsJun 03, 16Jun 05, 18IBM Corporation
9991118 Hybrid carbon hardmask for lateral hardmask recess reductionJan 04, 17Jun 05, 18Applied Materials Inc.
9991164 Semiconductor die singulation methodsJun 22, 16Jun 05, 18Semiconductor Components Industries, LLC
9991168 Germanium dual-fin field effect transistorJul 14, 16Jun 05, 18International Business Machine Corporation
9989856 Method of manufacturing semiconductor devicesMar 25, 16Jun 05, 18Samsung Electronics Co., Ltd.
9991132 Lithographic technique incorporating varied pattern materialsApr 17, 15Jun 05, 18Taiwan Semiconductor Manufacturing Company, Ltd.
9991117 Fin patterns with varying spacing without fin cutJun 20, 17Jun 05, 18International Business Machine Corporation
9989854 Photosensitive resin composition for projection exposure, photosensitive element, method for forming resist pattern, process for producing printed wiring board and process for producing lead frameJul 22, 14Jun 05, 18Hitachi Chemical Company, Ltd.
9991115 Directed self-assembly using trench assisted chemoepitaxySep 07, 16Jun 05, 18Interuniversitair Microelektronica Centrum (IMEC VZW)
9984878 Resist under layer film composition and patterning processApr 19, 16May 29, 18Shin-Etsu Chemical Co. Ltd.
9984877 Fin patterns with varying spacing without fin cutJun 20, 17May 29, 18International Business Machine Corporation
9984876 Lithographic technique for feature cut by line-end shrinkApr 03, 17May 29, 18Taiwan Semiconductor Manufacturing Company, Ltd.
9985129 High-voltage metal-oxide-semiconductor transistor and fabrication method thereofNov 22, 17May 29, 18United Microelectronics Corp.
9985134 FinFETs and methods of forming FinFETsMar 10, 17May 29, 18Taiwan Semiconductor Manufacturing Company Ltd.
9985045 Semiconductor structureDec 11, 17May 29, 18Macronix International Co. Ltd.
9984858 ALE smoothness: in and outside semiconductor industryAug 31, 16May 29, 18Lam Research Corporation
9978596 Self-aligned multiple spacer patterning schemes for advanced nanometer technologyDec 13, 16May 22, 18Applied Materials Inc.

Showing 1 to 20 of 1086 results