C23F 1/10

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
2024/0339,327 METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRYJun 20, 24Oct 10, 24Taiwan Semiconductor Manufacturing Company Ltd.
2023/0374,669 Wet Etching MethodOct 11, 21Nov 23, 23Not available
2021/0102,121 ETCHING COMPOSITIONSNov 24, 20Apr 08, 21Not available
2020/0283,911 ETCHING METAL USING N-HETEROCYCLIC CARBENESJun 01, 17Sep 10, 20Not available
2017/0167,032 ETCHING SOLUTION COMPOSITION FOR TUNGSTEN LAYER, METHOD FOR PREPARING ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICESep 08, 16Jun 15, 17DONGWOO FINE-CHEM CO., LTD.
2014/0023,827 ETCHING PASTE, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAMEMar 12, 13Jan 23, 14CHEIL INDUSTRIES INC.
2013/0277,602 ETCHING AGENT FOR ALUMINUM OR ALUMINUM ALLOYJun 24, 13Oct 24, 13HENKEL AG & CO. KGAA
2013/0126,093 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GASSUPPLY METHODJan 11, 13May 23, 13TOKYO ELECTRON LIMITED
2013/0105,729 ETCHING LIQUID FOR FILM OF MULTILAYER STRUCTURE CONTAINING COPPER LAYER AND MOLYBDENUM LAYERMay 27, 11May 02, 13MITSUBISHI GAS CHEMICAL COMPANY, INC.
2013/0048,904 ETCHING LIQUID FOR A COPPER/TITANIUM MULTILAYER THIN FILMJan 28, 11Feb 28, 13MITSUBISHI GAS CHEMICAL COMPANY, INC., SHARP KABUSHIKI KAISHA,
2013/0048,598 PLATING METHOD OF CIRCUIT SUBSTRATE, PRODUCTION METHOD OF PLATED CIRCUIT SUBSTRATE, AND SILVER ETCHING LIQUIDJun 20, 12Feb 28, 13TOKUYAMA CORPORATION
2012/0319,033 ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREINFeb 15, 11Dec 20, 12MITSUBISHI GAS CHEMICAL COMPANY, INC.
2011/0218,645 SURFACE OF TITANIUM- BASED METAL IMPLANTS TO BE INSERTED INTO BONE TISSUEJun 07, 07Sep 08, 11Not available
2011/0195,142 HEAT-REACTIVE RESIST MATERIAL, LAYERED PRODUCT FOR THERMAL LITHOGRAPHY USING THE MATERIAL, AND METHOD OF MANUFACTURING A MOLD USING THE MATERIAL AND LAYERED PRODUCTOct 13, 09Aug 11, 11ASAHI KASEI E-MATERIALS CORPORATION
2009/0011,585 Methods of Etching Nanodots, Methods of Removing Nanodots From Substrates, Methods of Fabricating Integrated Circuit Devices, Methods of Etching a Layer Comprising a Late Transition Metal, and Methods of Removing a Layer Comprising a Late Transition Metal From a SubstrateJul 05, 07Jan 08, 09MICRON TECHNOLOGY, INC.
2008/0210,660 Medium For Etching Oxidic, Transparent, Conductive LayersJun 08, 06Sep 04, 08MERCK PATENT GMBH
2008/0203,060 ETCHING METHOD AND ETCHING COMPOSITION USEFUL FOR THE METHODFeb 28, 08Aug 28, 08TOSOH CORPORATION
2008/0190,894 Chemical Mechanical Polishing Slurries, Their Applications and Method of Use ThereofApr 19, 06Aug 14, 08ANJI MICROELECTRONICS (SHANGHAI) CO., LTD.