C30B

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Showing 1 to 20 of 9195 results

Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
2025/0118,552 METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYEROct 09, 24Apr 10, 25Commissariat A L' Energie Atomique Et Aux Energies Alternatives; Centre National De La Recherche Scientifique (CNRS); UNIVERSITE GRENOBLE ALPES; INSTITUT POLYTECHNIQUE DE GRENOBLE;
2025/0118,554 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE, AND CONTROL DEVICEJan 26, 23Apr 10, 25KYOCERA CORPORATION
2025/0116,030 Two-Dimensional Halide Perovskite NanowiresOct 09, 24Apr 10, 25Not available
2025/0116,031 SCINTILLATION CRYSTAL AND PREPARATION METHOD AND PREPARATION DEVICE THEREOFOct 01, 24Apr 10, 25MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
2025/0116,032 HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICEDec 03, 24Apr 10, 25SICC CO., LTD.
2025/0116,033 SiC EPITAXIAL WAFERDec 19, 24Apr 10, 25Resonac Corporation
2025/0112,042 METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYERSep 27, 24Apr 03, 25Not available
2025/0112,043 LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTSDec 20, 23Apr 03, 25Applied Materials Inc.
2025/0109,520 MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON ROD AND SINGLE-CRYSTAL FURNACEDec 22, 23Apr 03, 25Not available
2025/0109,521 METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCRYSTALLINE SILICON, AND DEVICE FOR GROWING CZOCHRALSKI MONOCRYSTALLINE SILICONSep 24, 24Apr 03, 25ZING SEMICONDUCTOR CORPORATION
2025/0109,522 GROWTH DEVICE OF SILICON CARBIDE SINGLE CRYSTAL AND GROWTH METHODDec 12, 24Apr 03, 25SUZHOU UKING SEMICONDUCTOR TECHNOLOGY CO., LTD.
2025/0109,523 METHOD FOR MANUFACTURING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVING PEROVSKITE STRUCTURE, AND METHOD FOR TRANSFERRING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVING PEROVSKITE STRUCTUREMar 08, 22Apr 03, 25University of Ulsan Foundation for Industry Cooperation
2025/0109,524 METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSICALLY CARBON-DOPED GROUP III-NITRIDE FILMSSep 29, 23Apr 03, 25Not available
2025/0109,525 HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICEDec 05, 24Apr 03, 25SICC CO., LTD.
2025/0109,526 SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFERDec 13, 24Apr 03, 25Resonac Corporation
2025/0101,631 MATERIAL COMPRISING A LAYER OF SELF-ASSEMBLED, ONE-DIMENSIONAL ZNO MICROCRYSTALSJul 21, 22Mar 27, 25Not available
2025/0101,629 MULTI-LAYER EPI CHAMBER BODYDec 11, 24Mar 27, 25Not available
2025/0101,632 EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN FILMS BY REACTIVE ANNEALSDec 11, 24Mar 27, 25Not available
2025/0101,576 METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILICON GERMANIUM ON A SURFACE OF A SUBSTRATEDec 14, 22Mar 27, 25Not available
2025/0101,630 HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAMEOct 24, 22Mar 27, 25Shin-Etsu Chemical Co. Ltd.

Showing 1 to 20 of 9195 results