2025/0118,552 | METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER | Oct 09, 24 | Apr 10, 25 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives; Centre National De La Recherche Scientifique (CNRS); UNIVERSITE GRENOBLE ALPES; INSTITUT POLYTECHNIQUE DE GRENOBLE; |
2025/0118,554 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE, AND CONTROL DEVICE | Jan 26, 23 | Apr 10, 25 | KYOCERA CORPORATION |
2025/0116,030 | Two-Dimensional Halide Perovskite Nanowires | Oct 09, 24 | Apr 10, 25 | Not available |
2025/0116,031 | SCINTILLATION CRYSTAL AND PREPARATION METHOD AND PREPARATION DEVICE THEREOF | Oct 01, 24 | Apr 10, 25 | MEISHAN BOYA ADVANCED MATERIALS CO., LTD. |
2025/0116,032 | HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | Dec 03, 24 | Apr 10, 25 | SICC CO., LTD. |
2025/0116,033 | SiC EPITAXIAL WAFER | Dec 19, 24 | Apr 10, 25 | Resonac Corporation |
2025/0112,042 | METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER | Sep 27, 24 | Apr 03, 25 | Not available |
2025/0112,043 | LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS | Dec 20, 23 | Apr 03, 25 | Applied Materials Inc. |
2025/0109,520 | MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON ROD AND SINGLE-CRYSTAL FURNACE | Dec 22, 23 | Apr 03, 25 | Not available |
2025/0109,521 | METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCRYSTALLINE SILICON, AND DEVICE FOR GROWING CZOCHRALSKI MONOCRYSTALLINE SILICON | Sep 24, 24 | Apr 03, 25 | ZING SEMICONDUCTOR CORPORATION |
2025/0109,522 | GROWTH DEVICE OF SILICON CARBIDE SINGLE CRYSTAL AND GROWTH METHOD | Dec 12, 24 | Apr 03, 25 | SUZHOU UKING SEMICONDUCTOR TECHNOLOGY CO., LTD. |
2025/0109,523 | METHOD FOR MANUFACTURING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVING PEROVSKITE STRUCTURE, AND METHOD FOR TRANSFERRING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVING PEROVSKITE STRUCTURE | Mar 08, 22 | Apr 03, 25 | University of Ulsan Foundation for Industry Cooperation |
2025/0109,524 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSICALLY CARBON-DOPED GROUP III-NITRIDE FILMS | Sep 29, 23 | Apr 03, 25 | Not available |
2025/0109,525 | HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | Dec 05, 24 | Apr 03, 25 | SICC CO., LTD. |
2025/0109,526 | SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER | Dec 13, 24 | Apr 03, 25 | Resonac Corporation |
2025/0101,631 | MATERIAL COMPRISING A LAYER OF SELF-ASSEMBLED, ONE-DIMENSIONAL ZNO MICROCRYSTALS | Jul 21, 22 | Mar 27, 25 | Not available |
2025/0101,629 | MULTI-LAYER EPI CHAMBER BODY | Dec 11, 24 | Mar 27, 25 | Not available |
2025/0101,632 | EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN FILMS BY REACTIVE ANNEALS | Dec 11, 24 | Mar 27, 25 | Not available |
2025/0101,576 | METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILICON GERMANIUM ON A SURFACE OF A SUBSTRATE | Dec 14, 22 | Mar 27, 25 | Not available |
2025/0101,630 | HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAME | Oct 24, 22 | Mar 27, 25 | Shin-Etsu Chemical Co. Ltd. |