C30B

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
RE49677 Reusable nitride wafer, method of making, and use thereofSep 04, 20Oct 03, 23SLT TECHNOLOGIES, INC.
RE48378 Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofMay 01, 17Jan 05, 21II-VI Delaware, Inc.
RE47114 Polycrystalline group III metal nitride with getter and method of makingMar 24, 17Nov 06, 18SLT TECHNOLOGIES, INC.
9995693 Quality evaluation method for silicon wafer, and silicon wafer and method of producing silicon wafer using the methodJun 22, 16Jun 12, 18Sumco Corporation
9994970 Method of producing a synthetic diamondFeb 04, 16Jun 12, 18ECOTRICITY GROUP LIMITED
9994442 Method for arranging fine particles on substrate by physical pressureApr 09, 10Jun 12, 18Industry - University Cooperation Foundation Sogang University
9994950 Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AINJun 24, 14Jun 12, 18Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V.; TU DRESDEN;
9994936 Off-axis epitaxial lift off processAug 15, 11Jun 12, 18Alta Devices, Inc.
9995875 Method and apparatus for producing crystalline cladding and crystalline core optical fibersJul 27, 16Jun 12, 18The Penn State Research Foundation; General Opto Solutions, LLC;
9997353 Silicon composite substratesApr 26, 17Jun 12, 18Not available
9994969 View port for observing ingot growth process and ingot growth apparatus including sameAug 01, 14Jun 12, 18SK Siltron Co., Ltd.
9997355 Method for preparing a quantum dot mixture with a bimodal size distributionSep 15, 17Jun 12, 18National Tsing Hua University
9995783 Measurement apparatus and methodJun 28, 16Jun 12, 18Metryx Limited
9997778 Polycrystalline vanadium oxide nanosheetsNov 05, 13Jun 12, 18University of Washington through its Center for Commercialization
9994971 Method for fabricating carbon-based composite materialDec 01, 16Jun 12, 18Tamkang University
9997706 Semiconductor nanocrystals and methods of preparationJun 07, 13Jun 12, 18SAMSUNG RESEARCH AMERICA, INC.
9991342 Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a deviceOct 25, 13Jun 05, 18Commissariat A L' Energie Atomique Et Aux Energies Alternatives; Aledia;
9988738 Method for manufacturing SiC epitaxial waferDec 26, 13Jun 05, 18Mitsubishi Electric Corporation
9988740 Shaped induction field crystal printerAug 16, 16Jun 05, 18Northrop Grumman Systems Corporation
9991438 Magnetostrictive member and manufacturing method thereofJul 14, 17Jun 05, 18NIPPON KOSHUHA STEEL Co., Ltd

Showing 1 to 20 of 6996 results