| 2024/0141,483 | APPARATUS, SYSTEMS, AND METHODS OF USING AN ATMOSPHERIC EPITAXIAL DEPOSITION TRANSFER CHAMBER | Oct 26, 22 | May 02, 24 | Not available |
| 2024/0141,487 | EPI OVERLAPPING DISK AND RING | Oct 27, 22 | May 02, 24 | Not available |
| 2024/0141,544 | SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR | Jan 11, 24 | May 02, 24 | Not available |
| 2024/0141,545 | DNA-PROGRAMMED PHOTONIC CRYSTAL FABRICATION PROCESSES | Oct 19, 23 | May 02, 24 | Not available |
| 2024/0141,546 | METHOD FOR EVALUATING QUARTZ GLASS CRUCIBLE, METHOD FOR MANUFACTURING THE SAME, AND QUARTZ GLASS CRUCIBLE | Feb 25, 22 | May 02, 24 | SHIN-ETSU QUARTZ PRODUCTS CO., LTD. |
| 2024/0141,547 | PREPARATION METHOD OF P-TYPE HIGH-RESISTANCE AND ULTRA-HIGH-RESISTANCE CZOCHRALSKI MONOCRYSTALLINE SILICON SUBSTRATE | Mar 02, 23 | May 02, 24 | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
| 2024/0141,548 | SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL | Jan 28, 22 | May 02, 24 | Shin-Etsu Handotai Co Ltd. |
| 2024/0141,549 | PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON TWO-DIMENSIONAL (2D) CRYSTAL TRANSITION LAYER | Oct 31, 23 | May 02, 24 | Beijing Peking University WBL Corporation Ltd. |
| 2024/0141,550 | SILICON CARBIDE WAFER MANUFACTURING APPARATUS | Sep 28, 23 | May 02, 24 | Not available |
| 2024/0141,551 | DICHROIC MIRROR AND SHORTPASS FILTER FOR IN-SITU REFLECTOMETRY | Apr 28, 23 | May 02, 24 | Not available |
| 2024/0141,552 | SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME | Mar 04, 22 | May 02, 24 | Shin-Etsu Chemical Co. Ltd.; Shin-Etsu Handotai Co Ltd.; |
| 2024/0141,553 | VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER | Mar 28, 23 | May 02, 24 | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 2024/0142,390 | METHOD FOR EVALUATING CRYSTAL DEFECTS IN SILICON CARBIDE SINGLE CRYSTAL WAFER | Feb 25, 22 | May 02, 24 | Shin-Etsu Handotai Co Ltd. |
| 2024/0140,990 | CRYSTALLINE SALT FORMS OF BOC-D-ARG-DMT-LYS-(BOC)-PHE-NH2 | Aug 08, 23 | May 02, 24 | Not available |
| 2024/0140,877 | Material and Process for Fabricating and Shaping of Transparent Ceramics | Mar 28, 22 | May 02, 24 | Not available |
| 2024/0145,240 | LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESS | Oct 18, 23 | May 02, 24 | Applied Materials Inc. |
| 2024/0145,550 | CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER | Oct 27, 22 | May 02, 24 | Not available |
| 2024/0145,622 | TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Feb 22, 22 | May 02, 24 | KYOCERA CORPORATION |
| 2024/0136,181 | SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND TEMPLATE SUBSTRATE | Feb 24, 22 | Apr 25, 24 | KYOCERA CORPORATION |
| 2024/0134,151 | PROCESS CHAMBER WITH REFLECTOR | Oct 20, 22 | Apr 25, 24 | Applied Materials Inc. |