RE47923 | Semiconductor device and method of forming PIP with inner known good die interconnected with conductive bumps | Mar 01, 16 | Mar 31, 20 | STATS ChipPAC Pte. Ltd. |
RE47909 | Wafer transfer apparatus and substrate transfer apparatus | May 10, 18 | Mar 17, 20 | Kawasaki Jukogyo Kabushiki Kaisha |
RE47892 | Semiconductor light emitting device | Jan 10, 14 | Mar 03, 20 | Epistar Corporation |
RE47890 | Packaging for fingerprint sensors and methods of manufacture | Jul 11, 17 | Mar 03, 20 | Amkor Technology, Inc. |
RE47891 | Emission device, surface light source device, display and light flux control member | May 23, 16 | Mar 03, 20 | Enplas Corporation |
RE47866 | Three-dimensionally stacked nonvolatile semiconductor memory | Feb 04, 16 | Feb 18, 20 | TOSHIBA MEMORY CORPORATION |
RE47854 | Semiconductor component and method for contacting said semiconductor component | Dec 12, 13 | Feb 11, 20 | Infineon Technologies AG |
RE47816 | Three-dimensional nonvolatile memory cell structure with upper body connection | Jan 12, 18 | Jan 14, 20 | Conversant Intellectual Property Management Inc. |
RE47817 | Display device with a narrow frame | Apr 30, 15 | Jan 14, 20 | EL TECHNOLOGY FUSION GODO KAISHA |
RE47815 | Nonvolatile semiconductor memory device | Apr 24, 18 | Jan 14, 20 | TOSHIBA MEMORY CORPORATION |
RE47804 | Luminescent display device | Sep 28, 18 | Jan 07, 20 | Joled, Inc. |
RE47780 | Light-emitting apparatus, backlight unit, liquid crystal display apparatus, and illumination apparatus | Jul 17, 17 | Dec 24, 19 | Panasonic Intellectual Property Management Co., Ltd. |
RE47781 | Organic electro luminescent display and method for fabricating the same | Oct 04, 16 | Dec 24, 19 | Samsung Display Co., Ltd. |
RE47767 | Group III-nitride layers with patterned surfaces | Dec 23, 15 | Dec 17, 19 | Nokia of America Corporation |
RE47765 | Solid state imaging device | Aug 10, 17 | Dec 10, 19 | Nikon Corporation |
RE47763 | Organic electroluminescence device and electronic device | Apr 05, 17 | Dec 10, 19 | Idemitsu Kosan Co., Ltd. |
RE47710 | Power semiconductor having a lightly doped drift and buffer layer | Feb 20, 15 | Nov 05, 19 | Infineon Technologies Austria AG |
RE47709 | Forming grounded through-silicon vias in a semiconductor substrate | Oct 27, 16 | Nov 05, 19 | Taiwan Semiconductor Manufacturing Company Ltd. |
RE47708 | Semiconductor device | Sep 14, 15 | Nov 05, 19 | NICHIA CORPORATION |
RE47711 | White light devices using non-polar or semipolar gallium containing materials and phosphors | Oct 14, 15 | Nov 05, 19 | Soraa, Inc. |