Method for production of thin film transistor array substrates

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United States of America Patent

PATENT NO 4778560
SERIAL NO

07056989

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of production of active matrix display substrates using thin film transistors and more particularly to a method for production of substrates for liquid-crystal display use. The active matrix substrate using the thin film transistor is produced by the mask processes of smaller number. The process of the present invention can reduce the number of the masks, by one, of the active matrix substrate using the inverted staggered thin film transistor which requires the masks from five levels to six levels. Further improvements reduce the number of the masks to four levels from three levels, thus contributing greatly towards lower cost, improved yield.

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Patent Owner(s)

  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawaguchi, Takao Hirakata, JP 5 143
Nagata, Seiichi Sakai, JP 24 549
Nanno, Yutaka Neyagawa, JP 15 506
Okawa, Noriko Osaka, JP 1 76
Takeda, Etsuya Suita, JP 11 356

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