Nonvolatile memory device and fabrication method thereof
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United States of America Patent
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Oct 5, 2010
Grant Date -
May 20, 2010
app pub date -
Jan 20, 2010
filing date -
Sep 22, 2006
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Abstract
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device
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