Compound semiconductor device and method of manufacturing the same
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United States of America Patent
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Feb 24, 2015
Grant Date -
Jun 7, 2012
app pub date -
Nov 21, 2011
filing date -
Dec 2, 2010
priority date (Note) -
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Abstract
A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.
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