Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium
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United States of America Patent
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Aug 28, 2001
Issued Date -
N/A
app pub date -
Jan 19, 2000
filing date -
Dec 13, 1994
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Abstract
A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elements Ag, In, Te and Sb with the respective atomic percent (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0<.alpha..ltoreq.30, 0<.beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 10.ltoreq..delta..ltoreq.80, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.
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