Bilayer trench first hardmask structure and process for reduced defectivity

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United States of America Patent

PATENT NO 8796150
APP PUB NO 20120187546A1
SERIAL NO

13012166

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Abstract

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A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akinmade-Yusuff, Hakeem B S Beacon, US 6 13
Choi, Samuel Sung Shik Beacon, US 6 32
Engbrecht, Edward R Poughkeepsie, US 8 70
Fitzsimmons, John A Poughkeepsie, US 114 1315

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