Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 7, 1989
Grant Date -
N/A
app pub date -
Apr 28, 1987
filing date -
Apr 28, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The disclosure relates to a method of forming an isolated semiconductor, preferably of the vertical bipolar variety, wherein a porous highly doped semiconductor layer is oxidized and, with a trench containing silicon oxide therein, forms a region encasing a moderately doped epitaxial layer disposed beneath a lightly doped epitaxial layer. The vertical bipolar device is formed in the moderately doped and lightly doped layers with the highly doped epitaxially deposited layer, which is now a silicon oxide layer, forming a portion of the isolation. The anodization of the highly doped layer takes place using an anodizing acid at a temperature of from about 0 to about 10 degrees C.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully