C30B

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SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER- TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR

Subclasses

SubclassTitle
1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00)
1/02 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)
1/04 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Isothermal recrystallisation
1/06 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient
1/08 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient Zone recrystallisation
1/10 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by solid state reactions or multi-phase diffusion
1/12 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by pressure treatment during the growth
3/00 Unidirectional demixing of eutectoid materials
5/00 Single-crystal growth from gels (under a protective fluid C30B 27/00)
5/02 Single-crystal growth from gels (under a protective fluid C30B 27/00) with addition of doping materials
7/00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00)
7/02 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by evaporation of the solvent
7/04 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by evaporation of the solvent using aqueous solvents
7/06 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by evaporation of the solvent using non-aqueous solvents
7/08 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by cooling of the solution
7/10 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by application of pressure, e.g. hydrothermal processes
7/12 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by electrolysis
7/14 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) the crystallising materials being formed by chemical reactions in the solution
9/00 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00)
9/02 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) by evaporation of the molten solvent

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2024/0141,483 APPARATUS, SYSTEMS, AND METHODS OF USING AN ATMOSPHERIC EPITAXIAL DEPOSITION TRANSFER CHAMBEROct 26, 22May 02, 24Not available
2024/0141,487 EPI OVERLAPPING DISK AND RINGOct 27, 22May 02, 24Not available
2024/0141,544 SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFORJan 11, 24May 02, 24Not available
2024/0141,545 DNA-PROGRAMMED PHOTONIC CRYSTAL FABRICATION PROCESSESOct 19, 23May 02, 24Not available
2024/0141,546 METHOD FOR EVALUATING QUARTZ GLASS CRUCIBLE, METHOD FOR MANUFACTURING THE SAME, AND QUARTZ GLASS CRUCIBLEFeb 25, 22May 02, 24SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
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2024/0141,548 SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTALJan 28, 22May 02, 24Shin-Etsu Handotai Co Ltd.
2024/0141,549 PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON TWO-DIMENSIONAL (2D) CRYSTAL TRANSITION LAYEROct 31, 23May 02, 24Beijing Peking University WBL Corporation Ltd.
2024/0141,550 SILICON CARBIDE WAFER MANUFACTURING APPARATUSSep 28, 23May 02, 24Not available
2024/0141,551 DICHROIC MIRROR AND SHORTPASS FILTER FOR IN-SITU REFLECTOMETRYApr 28, 23May 02, 24Not available
2024/0141,552 SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAMEMar 04, 22May 02, 24Shin-Etsu Chemical Co. Ltd.; Shin-Etsu Handotai Co Ltd.;
2024/0141,553 VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYERMar 28, 23May 02, 24Taiwan Semiconductor Manufacturing Co., Ltd.
2024/0142,390 METHOD FOR EVALUATING CRYSTAL DEFECTS IN SILICON CARBIDE SINGLE CRYSTAL WAFERFeb 25, 22May 02, 24Shin-Etsu Handotai Co Ltd.
2024/0140,990 CRYSTALLINE SALT FORMS OF BOC-D-ARG-DMT-LYS-(BOC)-PHE-NH2Aug 08, 23May 02, 24Not available
2024/0140,877 Material and Process for Fabricating and Shaping of Transparent CeramicsMar 28, 22May 02, 24Not available
2024/0145,240 LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESSOct 18, 23May 02, 24Applied Materials Inc.
2024/0145,550 CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYEROct 27, 22May 02, 24Not available
2024/0145,622 TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATEFeb 22, 22May 02, 24KYOCERA CORPORATION
2024/0136,181 SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND TEMPLATE SUBSTRATEFeb 24, 22Apr 25, 24KYOCERA CORPORATION
2024/0134,151 PROCESS CHAMBER WITH REFLECTOROct 20, 22Apr 25, 24Applied Materials Inc.

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