1/00 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) |
1/02 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) Details |
1/04 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) Details Means in, or combined with, modulating stage for reducing angle modulation |
1/06 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) Details Modifications of modulator to reduce distortion, e.g. by feedback, and clearly applicable to more than one type of modulator |
1/08 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of variable impedance element (H03C 1/28-H03C 1/34, H03C 1/46-H03C 1/52, H03C 1/62 take precedence) |
1/10 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of variable impedance element (H03C 1/28-H03C 1/34, H03C 1/46-H03C 1/52, H03C 1/62 take precedence) the element being a current-dependent inductor |
1/12 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of variable impedance element (H03C 1/28-H03C 1/34, H03C 1/46-H03C 1/52, H03C 1/62 take precedence) the element being a voltage-dependent capacitor |
1/14 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of variable impedance element (H03C 1/28-H03C 1/34, H03C 1/46-H03C 1/52, H03C 1/62 take precedence) the element being a diode |
1/16 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of discharge device having at least three electrodes (H03C 1/28-H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) |
1/18 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of discharge device having at least three electrodes (H03C 1/28-H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) carrier applied to control grid |
1/20 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of discharge device having at least three electrodes (H03C 1/28-H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) carrier applied to control grid modulating signal applied to anode |
1/22 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of discharge device having at least three electrodes (H03C 1/28-H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) carrier applied to control grid modulating signal applied to same grid |
1/24 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of discharge device having at least three electrodes (H03C 1/28-H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) carrier applied to control grid modulating signal applied to different grid |
1/26 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of discharge device having at least three electrodes (H03C 1/28-H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) carrier applied to control grid modulating signal applied to cathode |
1/28 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of transit-time tube |
1/30 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of transit-time tube by means of a magnetron |
1/32 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by deflection of electron beam in discharge tube |
1/34 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of light-sensitive element |
1/36 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of semiconductor device having at least three electrodes (H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) |
1/38 | Amplitude modulation (H03C 5/00, H03C 7/00 take precedence) by means of semiconductor device having at least three electrodes (H03C 1/34, H03C 1/5, H03C 1/52, H03C 1/62 take precedence) carrier applied to base of a transistor |