Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen
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United States of America Patent
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Apr 3, 2007
Grant Date -
Nov 11, 2004
app pub date -
Jul 9, 2002
filing date -
Jul 10, 2001
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Abstract
There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1.times.10.sup.20/cm.sup.3 to 1.times.10.sup.21/cm.sup.3 and has an amorphous structure, typically, an amorphous silicon film.
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