Importance

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Abstract

A temperature sensing and monitoring technique for integrated circuit devices, particularly dynamic random access memory (DRAM), which incorporates the comparison of a voltage inversely proportional to temperature to a voltage proportional to temperature thereby increasing the differential voltage vs. temperature. In a representative embodiment disclosed herein, these two voltages are designed to be equal at a given temperature and a comparison circuit produces a signal that changes from a logic level 'high' to a logic level 'low' at that given temperature. An additional transistor in each trip point current path forces the gate-to-source and drain-to-source voltage of current mirror transistors to be equal at the temperature trip points.

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First Claim