Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions
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United States of America Patent
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app pub date -
Jul 11, 2008
filing date -
Sep 30, 2004
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Abstract
A method of forming a transistor comprising: defining undercut recesses in the substrate at the source/drain regions thereof, the undercut recesses extending beneath the gate electrode; creating a halo implant region beneath the gate electrode between the recesses; and providing raised source/drain structures in the undercut recesses after creating the halo implant region.
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