Solid-state image device, manufacturing method thereof, and image capturing apparatus
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United States of America Patent
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Dec 24, 2013
Grant Date -
May 2, 2013
app pub date -
Dec 17, 2012
filing date -
Mar 4, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate.
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