Semiconductor device having metal gate structure

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United States of America Patent

PATENT NO 9825144
SERIAL NO

15644850

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Abstract

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A metal gate transistor includes a substrate, a metal gate on the substrate, and a source/drain region in the substrate adjacent to the metal gate. The metal gate includes a high-k dielectric layer, a bottom barrier metal (BBM) layer comprising TiSiN on the high-k dielectric layer, a TiN layer on the BBM layer, a TiAl layer between the BBM layer and the TiN layer, and a low resistance metal layer on the TiN layer.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yi-Wen Tainan, TW 424 5245
Huang, Tong-Jyun Tainan, TW 20 186
Lai, Chien-Ming Tainan, TW 59 505
Lin, Chien-Ting Hsinchu, TW 214 2051
Lin, Chun-Hsien Tainan, TW 261 1796
Tzou, Shih-Fang Tainan, TW 94 533
Wu, Hung-Yi Keelung, TW 57 275

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